TMC claims world’s first 3D TSV Flash memory

Devices fabricated with TSV technology have vertical electrodes and via (vertical interconnect access) that pass through silicon dies to provide connections, an architecture that realises high-speed data input and output while reducing power consumption.

Combining a 48-layer 3D flash process and TSV technology has allowed TMC to successfully increase programming bandwidth and lower power consumption. The gives twice the power efficiency of the same generation BiCS FLASH memory fabricated with wire-bonding technology. TSV BiCS FLASH also enables a 1TB device with a 16-die stacked architecture in a single package.

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In essence, this means greater storage and lower power draw on the same die size. When commercially available it will drive smartphones up to 256GB as standard and allow for greater than 2TB SSD.

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