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Semiconductor development company 4DS Memory claims to have developed ReRAM that has a speed approaching that of DRAM and that does not require error correction.
The company, which is listed on the ASX, said its ReRAM was now bridging the gap between flash memory and DRAM.
ReRAM or resistive random-access memory is non-volatile random-access memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor.
The announcement from 4DS comes after two others last year. In October, it announced it had produced working Interface Switching ReRAM technology the same size as a typical flash memory chip (40nm).
{loadposition sam08}In December, a memory endurance breakthrough was announced, with a 97% endurance yield, greater than the targeted 90 per cent yield.
4DS chief executive and managing director Dr Guido Arnout said: “Achieving a ReRAM read speed comparable to DRAM without the need for speed crippling error correction is unique and one of the most significant achievements in the company’s history.
"This enables high-density Storage Class Memory with effective read speeds comparable to DRAM, something unattainable until now."
He said in the last 12 months, 4DS had achieved scalability to 40nm, boosted endurance, and had now reached read speed comparable to DRAM.
"These technical achievements position the company uniquely in the memory development field with huge potential for Storage Class Memory – an emerging industry segment that leading memory companies recognise as an extremely important segment in which to establish a competitive edge," Dr Arnout added.
